PZT薄膜制备及激光感生热电电压研究

Preparation of PZT Thin Films and Research of Laser-Induced Thermoelectric Voltage

采用脉冲激光沉积(PLD)技术,在SrTiO3(STO)单晶衬底上成功地制备了不同组分x(x=0.03,0.30,0.53,0.80,0.97)和掺杂M(原子数分数为3%,M=Na,Sr,Bi,Ce)的锆钛酸铅Pb ZrxTi1-x,PZT铁电薄膜。检测结果表明,所有薄膜都是单一取向生长的,且没有杂相存在,但组分的改变和掺杂元素的引入会对薄膜的结晶质量产生不同程度的影响。另外,在10°倾斜的SrTiO3单晶衬底上生长的PZT铁电薄膜中还清楚地观察到了激光感生热电电压(LITV)信号,且在能量密度为0.16 J/cm2的紫外脉冲激光辐照下,x=0.03组分的PZT铁电薄膜中的LITV信号最大,峰值电压为60 mV,而在Pb(Zr0.53Ti0.47)O3铁电薄膜中,掺杂元素Na时LITV信号最大,峰值电压为61 mV,这与不掺杂时相比,其峰值电压增大了近50%。

Using pulse laser deposition（PLD） technology,different component x（x=0.03,0.30,0.53,0.80,0.97） and doped M（atom fraction 3%,M=Na,Sr,Bi,Ce） PZT ferroelectric thin films were successfully prepared on SrTiO3 monocrystalline substrates.The test results of XRD showed that all the thin films were single-phase and highly oriented.But the changes of components and doped elements could affect the crystallinity of thin films in various degrees.Furthermore,laser-induced thermoelectric voltage（LITV） signals were measured clearly in PZT ferroelectric thin films grown on 10° vicinal-cut SrTiO3 monocrystalline substrates.Through researching the influence of components and doped elements on the size of the signal,the maximun LITV signal was found under UV light irradiation of 0.16 J/cm2.For different component PZT ferroelectric thin films,the maximum peak voltage was 60 mV if and only if the component was x=0.03.For different doped Pb（Zr0.53 Ti0.47）O3 ferroelectric thin films,the maximun peak voltage was 61 mV if and only if the doped element was Na,which increased nearly 50% compared with the maximum peak voltage of no doped Pb（Zr0.53Ti0.47）O3 ferroelectric thin films.