摘要
A computer-automated Rutherford backscattering/channeling （RBS/C） system is developed to provide in situ ion beam analysis of the accelerator-TEM system in Wuhan University. The basic system components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the Panmure stepping motor controller and integrated circuit modules, and a Labview programmed operating system with associated electronics. Single crystalline Si（001） and ZnO（001） implanted with Mn ions were characterized with this computerized setup. The crystalline quality Xmin and channeling half angle of Si（O01） were measured to be 4.65% and 0.52%, respectively, which are comparable to theoretical values 4.2% and 0.32%. The ion implantation induced damage depth profile derived from channeling and random spectrum is in reasonable agreement with the result calculated by the SRIM Monte-Carlo simulation code.
A computer-automated Rutherford backscattering/channeling （RBS/C） system is developed to provide in situ ion beam analysis of the accelerator-TEM system in Wuhan University. The basic system components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the Panmure stepping motor controller and integrated circuit modules, and a Labview programmed operating system with associated electronics. Single crystalline Si（001） and ZnO（001） implanted with Mn ions were characterized with this computerized setup. The crystalline quality Xmin and channeling half angle of Si（O01） were measured to be 4.65% and 0.52%, respectively, which are comparable to theoretical values 4.2% and 0.32%. The ion implantation induced damage depth profile derived from channeling and random spectrum is in reasonable agreement with the result calculated by the SRIM Monte-Carlo simulation code.
基金
Supported by the National Natural Science Foundation of China under Grant No 10875091.
