摘要
光导的半导体开关(PCSS ) 的一种新类型的设计被介绍，并且 withstand 电压被改进。被触发背的 PCSS 的飞弧电压被发现比被触发前面的的高。由分析在被触发背的 PCSS 和被触发前面的 PCSS 之间的飞弧电压的差别，详细统计分析和理论解释被详细说明。实验也证明我们开发了的 PCSS 能在 30 Hz 的重复频率下面象 20 kV 一样高抵抗电压。
Design of a new type of photoconductive semiconductor switches （PCSSs） is presented, and the withstand voltage is improved. The ttashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 k V under the repetition frequency of 30 Hz.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 50837005 and 10876026, the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment under Grant No EIPE09203.
