摘要
Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter （TSP） by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-di^nensional heat conduction model, the physical meaning of the channel temperature for AIGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.
Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter （TSP） by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-di^nensional heat conduction model, the physical meaning of the channel temperature for AIGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.
