SAW器件用金刚石基c轴取向LiNbO_3压电薄膜的制备

Growth of Highly c-axis Oriented LiNbO_3 Films on Diamond Substrates for SAW Devices

采用脉冲激光沉积技术,在以c轴取向ZnO作为缓冲层的金刚石/硅基底上制备出了结晶良好的高c轴取向LiNbO3薄膜。利用X射线衍射对薄膜的结晶质量和c轴取向性进行了研究,结果表明制得的LiNbO3薄膜具有高度c轴取向且结晶质量良好。采用扫描电子显微镜和原子力显微镜对薄膜的表面形貌进行了分析,发现薄膜表面光滑,晶粒尺寸均匀,薄膜表面粗糙度约为20nm。

Highly c-axis oriented LiNbO_3 thin films have been grown on diamond/Si substrates coated with c-axis oriented ZnO buffer layer by pulsed laser deposition.X-ray diffractometry（XRD） was applied to characterize the quality and c-axis orientation of the films.The results show that LiNbO_3 thin films have excellent crystalline structure and highly c-axis oriented texture.The scanning electron microscopy（SEM） and atomic force microscopy（AFM） show that the achieved films have smooth surfaces and uniform grains.The root-mean-square（RMS） roughness of the film surface was about 20 nm.