808nm半导体激光器的温度特性

Temperature characteristics of 808nm semiconductor lasers

用波长漂移法测试了808 nm半导体激光器额定功率分别为1 W,2 W,3W的器件在不同的输出功率下的热阻,得到额定功率为1 W的器件在输出功率为1 W时的热阻最小为4.28 K/W,额定功率为2 W的器件在输出功率为2 W时的热阻最小为5.45 K/W,额定功率为3 W的器件在输出功率为3 W时的热阻最小为5.5 K/W。并对额定功率为3 W的器件在不同的占空比下进行了测试,0.5%占空比脉冲条件下温升相当于持续条件下温升的19.6%。并用ANSYS模拟了器件温度随时间的变化,得出脉冲的特点是1 ms温升就能达到稳态的50%,0.1 s就能达到稳态的95%以上。

Thermal-Resistor of Rated output power of 1 W,2 W and 3 W of 808 nm Semiconductor Lasers have been measured with the method of Wavelength shift on this essay,Through the Thermal-Resistance measurement,we can get when the Lasers are working in their Rated output power,the Thermal-Resistor are the lowest,they are 4.28 K/W,5.45 K/W and 5.5 K/W.We have test the temperature rising of Rated output power of 3 W in different duty cycle,getting when duty cycle is 0.5%,the temperature rising under continuous temperature rise is equivalent to 19.6%.Temperature changes with time has been simulationed with ANSYS simulation software,we get the feature of Pulse is that the temperature rising is equivalent to 50% of Steady-state in 1 ms,it can get more than 95% of Steady-state in 0.1 s.