摘要
MGa2O4（M=Zn,Ni） rods with similar crystallinity and BET surface area were prepared via a facile template-engaged reaction.The photocatalytic activities for water splitting of RuO2-loaded MGa2O4（M=Zn,Ni） were investigated under high-pressure Hg lamp.RuO2-loaded ZnGa2O4 catalyst exhibited much higher photocatalytic activity than RuO2-loaded NiGa2O4.Factors affecting the photocatalytic activities of RuO2-loaded MGa2O4（M=Zn,Ni） were discussed.It was suggested that the electronic structure of oxide semiconductor was a predominant factor of the photocatalytic behavior for RuO2-loaded MGa2O4（M=Zn,Ni）.
MGa2O4（M=Zn,Ni） rods with similar crystallinity and BET surface area were prepared via a facile template-engaged reaction.The photocatalytic activities for water splitting of RuO2-loaded MGa2O4（M=Zn,Ni） were investigated under high-pressure Hg lamp.RuO2-loaded ZnGa2O4 catalyst exhibited much higher photocatalytic activity than RuO2-loaded NiGa2O4.Factors affecting the photocatalytic activities of RuO2-loaded MGa2O4（M=Zn,Ni） were discussed.It was suggested that the electronic structure of oxide semiconductor was a predominant factor of the photocatalytic behavior for RuO2-loaded MGa2O4（M=Zn,Ni）.
基金
supported by the Natural Science Foundation of Fujian Province (No. 2009J05025)
the Educational Commission of Fujian province (No. JA09051)
