摘要
使用自动变温霍耳测试系统测定了减压ＭＯＶＰＥ外延生长的锌δ掺杂ＧａＡｓ结构．结果表明，改进δ掺杂工艺在５５０℃下掺杂可获得高达３×１０１３／ｃｍ２的室温二维空穴浓度．在１５～８０Ｋ低温下发现高浓度Ｚｎδ掺杂ＧａＡｓ样品中出现反常霍耳导电行为．
The Zn δ doped GaAs structures grown by low pressure MOVPE have been characterized by Hall measurement. Up to 3×10 13 /cm 2 sheet hole concentrations at room temperature were obtained by an improved δ doping at 550 ℃. Anomalous phenomena of conductivity were found in heavily Zn δ doped GaAs samples from 15 to 80 K.
基金
国家教育部博士点基金
关键词
霍耳效应
MOVPE
砷化镓
锌
Δ掺杂
杂质带导电
Hall effect
MOVPE
Gallium arsenide
Zinc δ doping
impurity band conductivity
