应变Si(100)态密度模型

Model of Density of State(DOS) in Strained Si(100)

应变Si技术是当前微电子领域研究发展的热点和重点,态密度是其材料的重要物理参量。基于应变Si/(100)Si1-xGex能带结构和载流子有效质量模型,获得了导带底电子和价带顶空穴态密度有效质量,并在此基础上建立了其导带底和价带顶附近态密度模型。该模型数据量化,可为应变Si/(100)Si1-xGex材料物理的理解及其他物理参量模型的建立奠定重要的理论基础。

There has been a lot of interest in the strained Si technology in the microelectronic field.Density of state is the important physical parameter in strained Si materials.Based on the models of band structure and mobility effective mass in strained Si/（100）Si1-xGex,density of state effective masses of electron and hole and density of state near the bottom of conduction band and the top of valence band were obtained.The quantized model obtained can provide valuable references to the understanding on strained Si/（100）Si1-xGex material physics and theoretical basis on the other important physical parameters.