低质量Si材料制备太阳电池

Solar cell fabrication from low quality silicon feedstock

通过对比不同硼-磷(B-P)补偿程度的低成本、高杂质含量硅材料制备的太阳电池的性能,发现在含B和其它杂质含量都比较高的Si材料中通过掺入P补偿过多的B可以提高低质量Si片的电阻率、增加少数载流子寿命从而提高电池效率同时还能够减少电池性能的衰减。利用低质量Si材料(B含量2×10-6wt)制作出了效率达到14%左右的大面积太阳电池。

The performances of industrial multi-crystal solar cells with different boron-phosphorus（B-P） compensating levels were compared.The results revealed that using phosphorus（P） to compensate boron（B） was an effective way to increase resistivity and minority carrier lifetime of the low quality silicon wafer,and it could also reduce the light-induced degradation of the solar cells.Finally,the high-performance solar cells were fabricated by using the low quality silicon with B concentration of 2×10-6 wt,and the efficiency was about 14%.The reached compensation could also decrease the light-induced degradation,since the ironed boron compensated by the ironed phosphorus could prevent B-O recombination.