摘要
GaAs HBT是设计微波单片功率放大器的主要工艺之一,而集电结电容CBC是HBT功率放大器产生非线性的主要参量。文中采用Gummel-Poon晶体管模型分析了HBTCBC随电路偏置变化的规律,给出了CBC随输入功率的变化趋势,并基于Microwave Office软件进行了仿真验证。理论分析及仿真结果表明:CBC随输入信号功率的增大而增大,是功率放大器产生幅度和相位失真的主要原因,最后通过电路设计及测试验证了理论分析及仿真的正确性。
GaAs HBT is one of the main technologies for designing monolithic microwave power amplifiers （PAs）. The capacitor between the base terminal and collector terminal CBC is the dominant nonlinear element in HBT PAs. This paper analyzes the law of variation of HBT Csc with circuit bias using the Gummel-Poon transistor model, and presents the tendency of CBC to vary with input power. Simulation results based on AWR Microwave Office show that the main reason for the PAs＇ amplitude and phase distortion is that CBC increases with the rise of the input signal power. Circuit design and testing verify the correctness of the theoretical analysis and simulation.
出处
《电子科技》
2011年第1期115-117,120,共4页
Electronic Science and Technology
