摘要
通过对近年来的部分国外文献进行归纳分析,介绍了碲镉汞(MCT)缺陷研究的现状。与其他类似的半导体相比,MCT以其显著的优势成为红外焦平面(FPA)器件中最为常用的窄带隙材料。MCT外延层中的缺陷可能会影响光敏元的性能,降低MCT焦平面器件的可用性。衬底类型、衬底晶向和生长期间的衬底温度等因素对MCT外延层的质量有明显影响。高质量MCT外延层的生长要求人们对形成缺陷的各种因素有深入的了解并能对其进行良好的控制。借助各种制备和表征技术,MCT的外延生长取得了显著进展。
The current status of the research on mercury cadmium telluride（MCT） defects is reviewed by summarizing and analyzing the related papers published in recent years.MCT offers significant advantages over other similar semiconductors.This has made it to be the most widely used narrow gap material in infrared focal plane array（FPA） devices.The defects in MCT epilayers can inhibit the pixel performance and operatability of the FPA fabricated with this material.The type,orientation,and growth temperature of the substrate etc.are the factors which have apparent effect on MCT epilayer quality.To grow high quality MCT epilayers,different factors which may result in defects should be further understood and controlled properly.Significant progresses have been made in the epitaxial growth of MCT with the aid of various fabrication and characterization techniques.
出处
《红外》
CAS
2011年第1期1-9,共9页
Infrared
关键词
碲镉汞
外延生长
外延层
缺陷
红外探测器
mercury cadmium telluride
epitaxial growth
epilayer
defect
infrared detector
