氧压对Zn_(1-x)Al_xO薄膜结构的影响及激光感生电压效应

Effect of oxygen pressure on structure of Zn_(1-x)Al_xO thin film and laser-induced voltages

为了研究不同退火氧压对铝掺杂氧化锌薄膜结晶质量和激光感生电压效应的影响,采用脉冲激光沉积法在蓝宝石(0001)单晶平衬底上制备了薄膜,并利用X射线衍射对薄膜的结构进行了表征,测量了薄膜在紫外脉冲激光辐照下诱导产生的激光感生电压信号,对结果进行了理论分析和实验验证,成功制备出了单一取向的薄膜,确定了最佳生长条件,并利用这一条件在倾斜蓝宝石衬底上制备了薄膜。结果表明,当薄膜受到波长为248nm、脉冲宽度为20ns的脉冲激光照射时,在薄膜两端存在较大的激光感生电压信号,其最大值为0.532V,且随着退火氧压的增大,激光感生电压的峰值信号先增大后减小。这一结果对薄膜在紫外探测器方面的应用是有帮助的。

In order to study the influence of annealing oxygen pressure on crystalline and laser-induced voltages （LIV） of M-doped ZnO thin film, it was prepared on sapphire （0001） single crystal substrates by means of pulsed laser deposition technology. Then the micro-structure of the thin film was determined by means of X-ray diffraction （XRD）. The corresponding LIV signals were detected with these thin film illuminated by uhraviolet pulsed laser. The results were theoretically analyzed and experimentally validated. The results indicated that c-axis oriented thin fihn was produced and the optimal generation conditions were determined. Meanwhile, the results showed that the i）oth ends of the film would induce LIV and its maximal value was 0. 532V when the fihn was irradiated by laser with wavelength of 248nm, pulse bandwidth of 20ns. With the annealing oxygen pressure increasing, the peak LIV increases at first and then decreases, it is helpful to in the application of the film in ultraviolet detectors.