反射式高能电子衍射实时监控的分子束外延生长GaAs晶体衬底温度校准及表面相变的研究

Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring

以反射式高能电子衍射(RHEED)作为实时监测工具,根据GaAs(100)表面重构相与衬底温度、As4等效束流压强之间的关系,对分子束外延(MBE)系统中衬底测温系统进行了校准,这种方法也适用于其他的MBE系统.为生长高质量的外延薄膜材料、研究InGaAs表面粗糙化及相变等过程提供了实验依据.

Using RHEED as a real-time monitoring tool, the MBE temperature measurement system was calibrated according to the relationship between GaAs （100） surface reconstruction phase and the substrate temperature, As4 beam equivalent pressure of the substrate. This approach can also be applied to other MBE systems. It provides an experimental basis of the growth of high-quality epitaxial thin films for studying of the surface roughness of lnGaAs, the phase transformation process and the surface morphology.