摘要
对同一原生非掺杂InP单晶进行了一系列物理测试分析，研究了材料的光电导率与温度的依从关系，在295～318K内，温度系数为-3×10^-4eV／K，测得的室温禁带宽度为1．3392eV。禁带宽度Eg的磁性系数为8．6×10^-4eV／T，材料的磁光特性测量结果为1．8T。由此数据可得，约化电子有效质量mr·为0．067m0。由热电功率测量结果可得室温塞贝克系数为565μV／K。由此值以及霍尔测量值，可计算出状态密度有效质量md·为0．0757m0。由该值和上面提到的约化电子有效质量可得到InP样品的价带电子有效质量mv·为0．591m。。
Abstract： The physical properties were measured for the undoped InP using the temperature control multi purpose cryostat. The temperature dependent photoconduetivity measurement was investigated. The room temperature energy gap was 1. 339 2 eV and it＇s temperature coefficient was found to be -3 ×10^-44 eV/K in the range of 295 - 318 K . The magneto-optical properties were measured up to 1.8 T,the magnetic coefficient of Es is 8.6 ×10^-44 eV/T. From this value, the reduced effective mass of electrons mr· was found to be 0. 067 m0. From thermoelectric power measurements, Seebeck coefficient was found to be 565 μV/K at room temperature. The density of state effective mass md ·was calculated and found to be 0. 075 7m0 according to seebeck coefficient and the Hall measurement value. This value and that of the reduced effective mass of electrons mentioned above gave the effective mass of electrons in the valance band mv · of O. 591 m0 in this InP sample.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第1期1-3,44,共4页
Semiconductor Technology
基金
国家自然基金资助项目(61076004)
