稀磁半导体GaMnAs的物理性质研究

Physical Properties of Diluted Magnetic Semiconductors (Ga,Mn) As

利用低温分子束外延技术制备高质量的GaMnAs薄膜,通过XRD对样品进行分析,从实验和理论上分析生长条件、退火条件对薄膜缺陷及薄膜性能的影响.尤其是分析系统的研究间隙位Mn原子与As反位原子缺陷的变化,从而深入理解掺杂原子的周围结构与磁性之间的关系,为下一步制备自旋器件提供高载流子浓度、高居里温度的(Ga,Mn)As材料提供了可能性.

Excellent GaMnAs thin films are obtained by LT-MBE.And it is studied that the effcet of growth conditions and anneal on defect and properties of films.Particullarly,we symetically study the change of intersitial Mn and antisite As atoms.Thus,the relationship can be carefully understood between doped atoms and magnetics.In this case,it can supply a useful way to increase density of carriers and curie temperatures.