垂直腔面发射半导体激光器输出特性的分析

Output Characteristics of Vertical Cavity Surface Emitting Lasers

依据腔量子电动力学中自发辐射增强效应，分析了垂直腔面发射半导体激光器的微腔效应，比较了普通开腔和三维封闭腔中的结果。从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。并讨论了其输出特性即粒子数反转和光输出随泵浦速率变化的关系，同时也讨论了利用微腔效应进一步降低半导体激光器激射阈值的途径。

Based on the enhanced effect of spontaneous emission in cavity quantum electrodynamics, the microcavity effect of vertical cavity surface emitting lasers (VCSELs) is analyzed, and the results obtained in ordinary open cavities and in three dimensional closed cavities are compared. The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i. e ., the relationships of population inversion and optical power output versus pumping rate, are discussed. At the same time, the ways to further reduce the simulated emitting threshold for semiconductor lasers are proposed.