电子辐照NTD FZ Si等温退火特性

Isothermal Annealing Special Properties of NTD FZ Si under Electron Radiation

本文报导了关于高阻 Ｎ 型区熔（ Ｆ Ｚ） Ｎ Ｔ Ｄ－ Ｓｉ－ Ｐ＋ Ｎ 结二极管经电子辐照后的等温退火特性，获得５ 个缺陷能级： Ｅ１ ＝ ０ ．１６ｅ Ｖ， Ｅ２ ＝ ０ ．２７ｅ Ｖ， Ｅ３ ＝ ０ ．３１ｅ Ｖ， Ｅ４ ＝ ０ ．３７ｅ Ｖ 和 Ｅ５ ＝ ０ ．４２ｅ Ｖ．结果表明 Ｅ３ 和 Ｅ４ 有比其它３

Report the isothermal annealing characteristics on of high resistance N-FZ-NTD-Si-P +n diodes the electron radiation. By means of experiment obtain five defect energy levels: E 1 =0.16eV, E 2 =0.27eV, E 3 =0.31eV, E 4 =0.37eV and E 5 =0.42eV. Results show that E 3 and E 4 have better stability than the other three.