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CMOS工艺微控制器瞬时电离辐射效应实验研究 被引量：5

Experimental Research on Transient Ionizing Radiation Effects of CMOS Microcontroller
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摘要 利用CMOS工艺微控制器的实验测试系统,在"强光一号"加速器上进行了瞬时剂量率效应实验。实验研究采用的γ脉冲宽度为20ns,剂量率(以Si原子计)为6.7×106～2.0×108Gy/s。在不同的剂量率水平下观察到了扰动和闭锁效应,获得了微控制器的闭锁阈值,分析了扰动时间、系统功耗电流与剂量率间的关系。瞬时电离辐射在CMOS工艺电路的PN结中产生光电流,导致了电学和功能参数的退化。 This paper presents an experimental test system of CMOS microcontroller EE80C196KC20.Based on this system,the transient ionizing radiation effects on microcontroller were investigated using ＂Qiangguang-Ⅰ＂ accelerator.The gamma pulse width was 20 ns and the dose rate（for the Si atom）was in the range of 6.7×106 to 2.0×108 Gy/s in the experimental study.The disturbance and latchup effects were observed at different dose rate levels.Latchup threshold of the microcontroller was obtained.Disturbance interval and the system power supply current have a relationship with the dose rate level.The transient ionizing radiation induces photocurrent in the PN junctions that are inherent in CMOS circuits.The photocurrent is responsible for the electrical and functional degradation.
作者 金晓明 范如玉 陈伟 王桂珍 林东生 杨善潮 白小燕
机构地区 清华大学工程物理系 西北核技术研究所
出处 《原子能科学技术》 EI CAS CSCD 北大核心 2010年第12期1487-1492,共6页 Atomic Energy Science and Technology
关键词 瞬时电离辐射 微控制器 扰动 闭锁 闭锁阈值 transient ionizing radiation microcontroller disturbance latchup latchup threshold
分类号 TN431 [电子电信—微电子学与固体电子学] TN792 [电子电信—电路与系统]
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参考文献11

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共引文献6

同被引文献34

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引证文献5

二级引证文献9

原子能科学技术
2010年 第12期

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