亚微米特征工艺尺寸静态随机存储器单粒子效应实验研究

Experimental Research of SEU and SEL in High Density SRAMs With Sub-micron Feature Sizes

利用中国原子能科学研究院重离子加速器,开展了不同特征尺寸(0.35～0.13μm)CMOS工艺、不同集成度(1M、4M、8M、16M)静态随机存储器(SRAM)单粒子翻转(SEU)和单粒子闩锁(SEL)实验研究,给出了SRAM器件的SEU、SEL截面曲线。与μm级特征尺寸的器件相比,随特征尺寸的减小,单粒子翻转更加严重。测量到了令人关注的单粒子多位翻转(MBU)效应,对翻转位数进行了统计分析。MBU对目前卫星系统采用的EDAC技术提出了挑战。

The aggressive downscaling of CMOS technology has resulted in that radiation induced single event upset（SEU）reliability is getting worse and worse.Using the HI-13 tandem accelerator in China Institute of Atomic Energy,heavy ion SEU and single event latch-up（SEL）sensitivities for a variety of non-hardened high density static random access memories（SRAMs）with sub-micron feature sizes were reported.The results were compared with previously measured sensitivities for similar devices with larger features.The problems associated with SEU become more sever as device dimensions decrease.Multiple-bit upsets（MBU）for the HM62V16100LT15 in 0.13 μm CMOS technology caused by a single ion were analyzed.The frequency and the distribution of MBU were given.MBU makes challenge for EDAC adopted by the system of satellites.