〈331〉晶向ZnTe单晶的太赫兹辐射-探测性能理论研究

Calculation of Terahertz Pulse Propagation and Detection in 〈331〉 ZnTe Single Crystal

根据光整流效应辐射太赫兹理论,计算了〈331〉晶向ZnTe单晶的太赫兹辐射性能.通过与〈110〉、〈111〉晶向对比,当晶体方位角为0°或180°时,利用〈331〉晶向ZnTe单晶辐射太赫兹信号可以与〈111〉晶向相当,强于〈110〉晶向.利用电光取样原理,计算了〈331〉晶向ZnTe单晶的太赫兹探测性能,通过理论计算为〈331〉晶向ZnTe晶体有效辐射太赫兹波提供理论依据.

The THz pulses generation of 〈331〉-oriented ZnTe as emitter via its optical rectification were reported.Compared with 〈110〉、〈111〉-oriented ZnTe crystal,the 〈331〉-oriented ZnTe could even emit THz pulse.When the crystal oriented angle was 00 or 1800,the THz pulse amplitude from 〈331〉-oriented could be equal to 〈111〉-oriented,higher than 〈110〉-oriented.The THz pulses detection performance of 〈331〉-oriented ZnTe as detector was calculated via the electro-optical effect.The theoretical calculation from 〈331〉 ZnTe emitter demonstrated a direct way to optimize the working efficiency of a terahertz emitter.