摘要
分别运用SRK状态方程和PR状态方程对三氯氢硅合成系统中压缩前后深冷的物料量进行了计算,并与实际检测结果进行比较,结果表明SRK方程和PR方程的计算结果均与实际检测结果相符合,可以用于压缩前后深冷的计算;通过计算得出,提高系统压力以及提高氯化氢气体的纯度均有利于氯硅烷的冷凝。
The cryogenic material quantities before and after compression in synthetic system of trichlo- rosilane were calculated by using SRK and PR equation respectively, the calculating results were compared with the actual test result, which showed that they coincide with each other and the SRK and PR equation can be used in cryogenic calculation before and after compression. The calculation shows that increasing the system pressure and the purity of hydrogen chloride gas will be beneficial to condensation of chlorsilane.
出处
《有色冶金节能》
2010年第6期27-29,共3页
Energy Saving of Nonferrous Metallurgy
关键词
三氯氢硅合成
深冷计算
影响因素
synthetic trichlorosilane
deep cooling
calculation
influential factors
