摘要
采用Si粉和TiC为原料,通过反应热压可制得纳米SiC粒子复合的TiSi2材料,生成的纳米SiC粒子聚集分布在TiSi2基体中,SiC粒子与TiSi2的界面没有晶界相存在.但由于残余应力的作用.TiSi2晶格发生扭曲并有位错出现。
SiC/TiSi2 nanocomposite has been fabricated by hot pressing the mixed powders of Si and TiC. The reaction formed SiC particles are nanosized and distribute as clusters in TiSi2 matrix. The residual stress was induced due to the different thermal expansion coefficients of SiC and TiSi2. No amorphous phase was found on the interface between of SiC and TiSi2, however lattice twist and dislocations were observed in TiSi2 grains.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第8期893-896,共4页
Acta Metallurgica Sinica