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混合应变量子阱半导体光放大器噪声特性研究

Study on Noise Figure of SOA with Mix Strained MQW
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摘要 研究了直接耦合混合应变量子阱 S O A 的噪声特性.实验测定 S O A 在 130 m A 偏置电流下的噪声指数为 7.7 d B,表明应变量子阱结构改善了 S O A 的噪声性能.理论分析指出,通过消除 S O A 的剩余反射,其噪声性能可以得到进一步的改善. The noise figure of semiconductor optical amplifier (SOA) of strained multiple quantum well (MQW) has been studied in the paper. 7.7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure. The experimental result is explained theoretically. The theoretical analysis shows that the noise figure of SOA can be further improved by reducing residual reflectivity.
出处 《华中理工大学学报》 CSCD 北大核心 1999年第8期90-92,共3页 Journal of Huazhong University of Science and Technology
基金 国家高技术研究发展计划资助
关键词 半导体光放大器 应变量子阱 噪声指数 semiconductor optical amplifier strained quantum well noise figure Duan Zigang Doctoral Candidate
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参考文献1

  • 1Huang Yidong,IEEE J Quant Electron,1993年,29卷,12期,2950页

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