摘要
研究了直接耦合混合应变量子阱 S O A 的噪声特性.实验测定 S O A 在 130 m A 偏置电流下的噪声指数为 7.7 d B,表明应变量子阱结构改善了 S O A 的噪声性能.理论分析指出,通过消除 S O A 的剩余反射,其噪声性能可以得到进一步的改善.
The noise figure of semiconductor optical amplifier (SOA) of strained multiple quantum well (MQW) has been studied in the paper. 7.7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure. The experimental result is explained theoretically. The theoretical analysis shows that the noise figure of SOA can be further improved by reducing residual reflectivity.
出处
《华中理工大学学报》
CSCD
北大核心
1999年第8期90-92,共3页
Journal of Huazhong University of Science and Technology
基金
国家高技术研究发展计划资助
关键词
半导体光放大器
应变量子阱
噪声指数
semiconductor optical amplifier
strained quantum well
noise figure Duan Zigang Doctoral Candidate