分子动力学模拟入射角度对F离子与β-SiC表面相互作用的影响

Incident angle effect on F+ ions interaction with β-SiC:Molecular dynamics simulation

本文采用分子动力学方法模拟了不同入射角度对F离子与SiC表面相互作用的影响,模拟选择的入射能量为10 eV,入射角度分别为15?、30?、45?、60?和75?。模拟结果显示,F离子的沉积率随入射角度的增加而减小。当入射角度为45°时,Si原子和C原子的刻蚀率最大,且Si原子的刻蚀率大于C原子。在相互作用过程中,SiC表面形成一层Si-C-F反应层,反应层厚度随入射角度增加而减小,并且其主要成分是SiF和CF。

In this study,molecular dynamics simulation method was used to investigate the interactions of 10 eV F ions continuously bombarding SiC surface with incident angles of 15°,30°,45°,60° and 75°.The simulation results show that the deposition rate of F decreases with increasing incident angle.It is found that when the incident angle is 45？,the etching rates of Si and C atoms reach the maximum values.The etching rate of Si atoms is greater than that of C atoms.A Si-C-F reactive layer is formed after the F ions interaction with SiC surface.The thickness of Si-C-F layer decreases with increasing incident angle,and the formation of Si-C-F layer are primarily SiF and CF.