适用于间接矩阵变换器的IGBT驱动保护电路设计

Design of IGBT Driving and Protection Circuit for Indirect Matrix Converter

针对间接矩阵变换器中开关器件多,电路拓扑复杂的特点,设计了一种适用于间接矩阵变换器的绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的驱动保护电路。该电路基于M57962厚膜电路,并设有隔离电源和阈值电压调节电路,可以有效实现矩阵式变换器各个开关器件的隔离供电,以及对各开关器件的过流保护阈值的精确控制和调节,可推广运用于不同型号的开关器件。实验结果表明IGBT器件的开通时间为350ns,关断时间为700ns,在过流保护阈值电压设定为1.45V(对应采用IGBT器件的工作电流为30A)时,器件可在4μs内完全关断。从而证明了设计的驱动保护电路可以安全可靠地实现IGBT的开通、关断和过流保护,保障系统的稳定运行。

A driving and protection circuit for insulated gate bipolar transistor （IGBT） was designed. This circuit is applied in the indirect matrix converter, which has much more complex topology and higher number of switching devices than conventional PWM converters. The circuit is based on M57962 hybrid integrated cir- cuit with isolated power and threshold voltage regulator circuit, which is able to supply the isolated power for each switch device in the matrix converter and regulate the over-current protection threshold voltage of each switch device precisely. It also can be applied to different types of switching devices. The experiment results show that the turn-on time of IGBT is 350 ns, and the turn-off time is 700 ns. Once the over-current protection threshold voltage is set to 1.45 V （that means the current is 30 A） ,it only takes 4 μs to turned off the device completely. The results demonstrate that the designed driving and protection circuit can turn on/off IGBT and realize over-current protection safely and reliably,ensure the stable operation of the system.