化学溶液分解法制备(Bi_(0.8)Ce_(0.2))_2Ti_2O_7薄膜及性能研究

Preparation and Characterization of (Bi_(0.8)Ce_(0.2))_2Ti_2O_7 Thin Films by Chemical Solution Decomposition Method

采用化学溶液分解法(CSD)在p型Si<100>衬底上制备了(Bi0.8Ce0.2)2Ti2O7薄膜,采用X射线衍射技术研究了薄膜的结构和结晶性。研究表明:Ce3+部分取代Bi3+能够显著提高Bi2Ti2O7薄膜的相稳定性。同时还研究了薄膜的电容-电压特性、介电常数、介电损耗。结果表明,该薄膜具有良好的介电特性。

（Bi0.8Ce0.2）2Ti2O7 thin films were grown on p-Si100 substrates by chemical solution decomposition method.The structure and crystallization characteristics of the films were studied by X-ray diffraction（XRD）.It is indicated that if Bi ions are partly substituted by Ce ions,the phase stability of Bi2Ti2O7 would be improved evidently.Capacitance-voltage properties,dielectric constants and dielectric loss of the thin films were studied.The results show that the prepared（Bi0.8Ce0.2）2Ti2O7 thin films have good dielectric properties.