Ce∶KNSBN晶体写入光位置对两波耦合增益的影响

Influence of Writing Beam Position on the Two-wave Coupling Gain in Ce∶KNSBN Crystal

本文采用非同时读出条件下两波耦合实验装置,以532 nm的单频固体激光器为光源,在不同写入光夹角θ、抽运光的偏振方向与e偏振光的方向呈10°、信号光为e偏振光及不同信号光与抽运光光强比条件下,通过改变写入光在Ce∶KNSBN晶体内的不同位置研究其对两波耦合有效增益的影响。研究结果表明,在相同角度下写入光强比为1∶10,写入光在晶体内位置d=0.1 cm时最佳,有效增益达到最大。在最佳写入光位置,写入光强比为1∶10时,在写入光夹角为24°时两波耦合有效增益为最大。并对实验结果进行了理论拟合与分析。

In this paper,the 532 nm incident beam derived from a single frequency solid laser,a non-synchronously numerating experimental system were used to study the influence of writing beam position on the two-wave coupling gain in a Ce∶KNSBN crystal with different writing beam position at different incident angles θ and different intensity ratio of the signal beam and pump beam,choosing the signal beam as an e polarization beam and fixing the angle between the polarization direction of pump beam and e polarization beam at 10°.The results indicate that the effective gain is maximum when the coupling location is 0.1 cm,the beam intensity ratio is 1∶10 at same incident angles θ;in the best coupling positon,when the beam intensity ratio is 1∶10 and the incident angle is 24°,the maximal effective gain can be find.The experimental results were fitted with theoretical analysis.