重掺杂P型Si_(1-x)Ge_x层中少数载流子浓度的低温特性

Low Temperature Characteristics of Minority Carrier Concentration in Heavily Doped p SiGe Layers

考虑了重掺杂引起的禁带变窄效应,建立起少数载流子室温和低温模型,并进行了定量的计算。研究发现,p-Si1-xGex中的少子浓度(电子)随x的增加而增加。在重掺杂条件下,常温时,少子浓度随杂质浓度的上升而下降;而低温时,少子浓度却随杂质浓度的上升而上升。

Taking band gap narrowing effect resulting from heavy doping into consideration,calculative models for minority carrier(electron) concentration in p Si 1-x Ge x layers at room and low temperatures are presented It has been shown that the minority carrier increases with the Ge fraction in p Si 1-x Ge x layers Furthermore,it has been found that,for heavily doped SiGe layers,as the doping concentration increase,the minority carrier concentration decreases at room temperature,but increases at low temperatures