摘要
叙述了以双极型工艺为主体的BiCMOS结构中p阱电阻比值非线性的特性及其与芯片合格率的关系。在p阱下面采用埋层,抑制或消除了BiCMOS中p阱结构的寄生效应。
The nonlinear behaviour of the resistor ratio of p well in BiCMOS structures based on bipolar process and its relationship with chip yield are described The parasitic effect of the p well in BiCMOS technology is suppressed or eliminated by using buried layers below p well, thus improving the yield of chips
出处
《微电子学》
CAS
CSCD
北大核心
1999年第5期331-335,共5页
Microelectronics
