摘要
研究了基于亲水处理的微观机理分析和不同清洗剂亲水处理的过程及效果,提出了一种独特的三步亲水处理法。这一方法既能顺利完成室温预键合,又能减少界面上非定形大尺寸SiOx体的生成,避免了界面对电输运的势垒障碍。
Based on the analysis of micromechanism of hydrophilicity treatment and effects of different cleaning solutions on silicon surface,a unique three step method for hydrophilicity treatment is presented in the paper,which can not only realize successful pre bonding at room temperature,but also avoid the grown up of large size amorphous SiO x that forms barriers to electric transportation in the bonding interface As a result,an ideal bonding interface can be obtained by using this method
出处
《微电子学》
CAS
CSCD
北大核心
1999年第5期354-357,共4页
Microelectronics
关键词
半导体工艺
表面处理
硅片直接键合
亲水处理
Semiconductor process
Surface treatment
Silicon to silicon direct bonding
Hydrophilicity treatment
Interface property
