摘要
采用Ｌｉｎｅａｒｉｚｅｄ－Ｍｕｆｆｉｎ－Ｔｉｎ－Ｏｒｂｉｔａｌ（ＬＭＴＯ）能带方法对应变超晶格（ＧａＡｓ）ｎ／（ＩｎＡｓ）１（００１）进行自洽计算．在得到较准确能带结构和本征波函数的基础上，计算该超晶格的光学介电函数虚部ε２（ω）、折射率和吸收系数．结果表明，该超晶格表现出的光学性质和ＧａＡｓ 体材料不相同，在１．５～２．５ｅＶ 能量范围的吸收系数增大。
We perform self\|consistent band calculation of (GaAs) n /(InAs)\-1(001) superlattices (SL's) by means of Linerized\|Muffin\|Tin\|Orbital (LMTO) method. The imaginary part of the dielectric functions, the refractive index and the absorption coeffecient for the (GaAs) n /(InAs)\-1(001) SL's have been calculated on the basis of the available results of relatively accurate eignvalue and eignfunction for SL's. The calculated results show that the optical properties of (GaAs) n /(InAs)\-1(001) SL's are different from the of bulk GaAs. The absorption coeffecient for the (GaAs) n /(InAs)\-1(001) superlattices is higher than that of bulk GaAs in the energy range from 1.5eV to 2.5eV. The superlattices also have rather good spectra response over a wide range of energy.
基金
国家高技术(863)新材料领域(863-715-10)课题资助
