摘要
用高能质子辐照代替12MeV 电子辐照, 制造出KK200A 晶闸管。对辐照前后以及退火后的宏观电学参数测量发现, 39MeV 的质子辐照不仅能有效缩短晶闸管的关断时间, 提高工作频率, 还能有效修复制造过程中电压穿通的晶闸管,
KK200A type fast switch thyristors was fabricated by proton irradiation in stead of 12MeV electron irradiation.It was found that 3 9MeV proton irradiation could not only reduced switching time of thyristor,but also repair thyristor which had been blockout and therefsre could be improved to be fast switching thyristor.
出处
《半导体技术》
CAS
CSCD
北大核心
1999年第5期6-8,共3页
Semiconductor Technology
基金
国家自然基金