减少GaAs发光二极管键合陷坑的方法

Methods in Decreasing GaAs LED Wire-bonding Pitfalls

砷化镓(GaAs)发光二极管LED芯片既可作为发光器件,也可作为光电显示器件,并以其低能耗高亮度的优势被广泛应用,然而由于GaAs材料在机械性能上的不足,使其很容易在组装过程中产生键合陷坑,并对大批量生产造成影响。文章通过对比分析GaAs与Si的机械特性以及GaAs发光二极管的键合特殊性,较为系统地阐述了GaAs发光二极管产生键合陷坑的原因,并针对超声能量、键合压力、载片台温度等键合参数对GaAs发光二极管产生键合陷坑的影响,进行了充分的单项试验,根据试验结果制定了减少GaA s发光二极管键合陷坑的键合方法,极大提高了GaAs发光二极管的键合可靠性。

GaAs LED chip could be used as a luminescent device,and it could be used as an optoelectric display device as well.Maintaining advantages of low power consumption,high brightness,it has been widely used.However,it also had some mechanical deficiencies,and it＇s easy to cause pitfalls during GaAs LED wire-bonding process,leading to effect upon batch production.This paper compared the mechanical characteristics of GaAs and Si,and the technical features of GaAs chip wire-bonding process. It talked systematically of the causes of GaAs LED wire-bonding pitfalls,and introduced several independent test works that were sufficiently-performed of key wire-bonding parameters as ultro-sonic energy, wire bonding pressure,worktable temperature,in order to analyze the effect they had on the GaAs LED wire-bonding pitfalls and take measures to decrease the pitfalls according to the tests＇ results.And the wire-bonding process reliability has been greatly improved.