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改善不同环境温度下SiGe HBT热稳定性的技术

Technology for Improving Thermal Stability of SiGe HBTs Under Different Ambient Temperatures
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摘要 提出了发射极非均匀指间距技术以增强多发射极指SiGe HBT在不同环境温度下的热稳定性。通过建立热电反馈模型对采用发射极非均匀指间距技术的SiGe HBT进行热稳定性分析,得到多发射极指上的温度分布。结果表明,与传统的均匀发射极指间距SiGe HBT相比,在相同的环境温度及耗散功率下,采用发射极非均匀指间距技术的SiGe HBT,其最高结温明显降低,热阻显著减小,温度分布更加均匀,有效地提高了多发射极指功率SiGe HBT在不同环境温度下的热稳定性。 A novel multi-finger power SiGe heterojunction bipolar transistor（HBT）with non-uniform finger spacing structure was proposed to improve the thermal stability under different ambient temperatures.The thermal simulation for a power SiGe HBT with a novel structure was achieved with a numerical electro-thermal model.The temperature distribution on emitter fingers was obtained.Compared with the traditional structure,the maximum junction temperature,temperature distribution and thermal resistance are significantly improved.The thermal stability is effective enhanced under different ambient temperatures.
作者 陈亮 张万荣 金冬月 肖盈 王任卿 尤云霞
机构地区 北京工业大学电子信息与控制工程学院
出处 《半导体技术》 CAS CSCD 北大核心 2011年第2期101-103,共3页 Semiconductor Technology
基金 国家自然科学基金项目(60776051 61006059 61006044) 北京市自然科学基金项目(4082007) 北京市教委科技发展计划项目(KM200710005015 KM200910005001) 北京市优秀跨世纪人才基金项目(67002013200301)
关键词 异质结双极晶体管 环境温度 热电反馈模型 结温 耗散功率 heterojunction bipolar transistor（HBT） ambient temperature electro-thermal model junction temperature dissipation power
分类号 TN322.8 [电子电信—物理电子学] TN306 [电子电信—物理电子学]
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参考文献9

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二级参考文献10

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半导体技术
2011年 第2期

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