摘要
提出一种AlGaAs/GaAs HEMT器件沟道电荷新模型,该模型用一个通用解析函数中系数的不同值来描述二维电子气(2DEG)和AlGaAs层中的电子浓度。在小信号特性上,除考虑了2DEG层外,又在考虑了AlGaAs层、速度饱和、饱和区沟道长度调制效应和源、漏串联电阻RS和RD等效应的基础上,推导出直流特性、跨导、输出电导和栅电容的解析表达式。仿真说明,在较大的栅、漏压范围内,该模型的理论值与实验结果符合良好。
A new channel charge model of the AlGaAs/GaAs HEMT was proposed.This model was described with the electronic concentration of the 2DEG and AlGaAs layer with a coefficient of different values for general analytic function.With small signal characteristics based on the 2DEG layer,AlGaAs layer,velocity saturation,channel length modulation effect and series resistance RS and RD,the DC characteristic,transconductance,output conductance and gate capacitance were obtained.The simulation tests show that the theoretical value of the model is in good agreement with the experimental results in a large gate and drain voltages range.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第2期112-115,156,共5页
Semiconductor Technology
基金
国家自然科学基金(11011140321)
