GaN基板上超薄阳极氧化铝的制备

Fabrication of Ultra-Thin Anodized Aluminum Oxide Films on GaN

在草酸溶液中对GaN基板上超薄Al膜进行阳极氧化,结合扫描电镜对阳极氧化铝形貌进行表征,系统研究了超薄Al膜的腐蚀条件和氧化过程,以及Al膜的厚度,反应变化时间和实验难度系数之间的关系。多孔状阳极氧化铝的孔径、分布及有序度等对氧化电压、氧化时间、电解液温度和溶液浓度等参数较为敏感。通过深层次的机理分析,给出了相应的合理解释。在此基础上,优化了超薄阳极氧化铝的制备参数,提升了实验的稳定性及重复性,促进了阳极氧化铝在GaN材料和器件中的应用。

The condition and process of the ultra-thin anodized aluminum oxide（AAO） were detailedly studied by oxalic acid and SEM images.The corrosive condition and oxidation process of the ultra-time Al oxide film were studied.The relations between the thickness of Al oxide film,the eroding time and the degree of experiment difficulty were also discussed.The pore diameter,distribution and order degree of the AAO are obviously sensitive to experiment parameters,including the oxidation voltage,time,solution temperature and concentration.On the base of corresponding principle analysis and interpretation,the optimized,stable and repeatable AAO film were obtained.It would promote the AAO application on GaN materials and devices.