摘要
半导体材料载流子迁移率是表征其电导特性的重要参数,在半导体材料载流子散射机制理论基础上,基于玻耳兹曼方程和Mathiessen规则,通过对具有不同热运动速度的载流子漂移速度求统计平均值,建立了Si材料载流子迁移率的玻耳兹曼统计模型,计算了模拟载流子迁移率的影响因素和变化规律,并得出电场作用下的饱和漂移速度为vdn=1.1×107cm/s,vdp=8.7×106cm/s,与基于实验数据的经验公式导出的结果基本一致,表明玻耳兹曼统计模型具有良好的适用性。
Carrier mobility is an important parameter for characterizing the conductivity of the semiconductor material. Based on the scattering mechanism of carrier mobility, Boltzmann equation and Mathiessen law, Boltzmann statistical model was established for carrier mobility of Si by statistically averaging the drift velocity of carriers with different thermal velocity. The affecting factors and changing trend of carrier mobility were calculated and analyzed and the saturated drift velocities under electrical field were derived, vdes=1.1×10^7cm/s,vdp=8.7×10^6cm/s,. Results are in good agreement with the experimental results, indicating its fitness for the presented statistical model.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2011年第2期112-115,共4页
Materials Reports
基金
湖南省自然科学基金(10JJ5049)
国家自然科学基金(60771028)
中南大学博士后基金(20091208)
粉末冶金国家重点实验室开放基金(PM200815)
关键词
半导体si
载流子迁移率
玻耳兹曼方程
计算模拟
semiconductor Si, carrier mobility, Boltzmann statistical equation, calculation simulation