AlN基片的薄膜金属化

Matallization of AIN substrates.

讨论了ＡｌＮ基片的薄膜金属化。通过试验，确定了有效的清洗方法及优化溅射参数。实验证明，ＴｉＷ－Ａｕ 是ＡｌＮ的优良金属化体系。ＡｌＮ材料经激光划片后出现导电物质，

ELECTRONIC COMPONENTS & MATERIALS (China) ,Vol.18,No.5,P.22 23(Oct.1999).In Chinese. The matallization on AIN substrate is discussed.The effective clean method and optimized sputtering parameters are determined through experiment.The experiment results show that TiW Au is suitable for the matallization of AIN substrates;the conductive matters produced by laser cutting can be removed with thin HCI solution.(4 refs.)