热处理对TaN薄膜电性能的影响

Effect of heat treatment on the electric properties of TaN thin films

采用直流磁控溅射法在Al2O3陶瓷基片上制备了TaN薄膜,研究了热处理温度和时间对TaN薄膜的方阻(R□)及电阻温度系数(TCR)的影响。研究发现,在热处理时间为2h的条件下,热处理温度在200℃到600℃变化时,R□从12?/□增加到24?/□,TCR从15×10-6/℃下降到-80×10-6/℃;在热处理温度为300℃的条件下,热处理时间对R□及TCR影响较小,随着热处理时间的增长,R□及TCR略有变化。

TaN thin films were deposited on Al2O3 ceramic substrate by DC magnetron sputtering.The effects of heat treatment temperature and time on the sheet resistance （R□） and temperature coefficient of resistance （TCR） of TaN thin films were investigated.The results show that the heat treatment temperature has great effects on both R□ and TCR under heat treatment for 2 h.With the heat treatment temperature increasing from 200 ℃ to 600 ℃,R□ increases from 12 Ω/□ to 24 Ω/□ and TCR decreases from 15×10^-6/℃ to-80×10^-6/℃.Under the heat treatment temperature of 300 ℃,heat treatment time has little effects on both R□ and TCR.As heat treatment time increases,R□ and TCR change slightly.