摘要
从可靠性和功率增益两方面对现有硅双极功率晶体管镇流技术作了仔细分析，并提出了改进措施。结果表明，采用改进的复合镇流技术，不仅有效地防止热斑和电流二次击穿现象，提高了器件的可靠性和工作寿命，而且有助于提高器件的功率增益。
From the reliabi1ity and the gain, the existing ballasting resistor for si1icon bipolar power transistor is carefully ana]yzed, and the improved method is proposed. The results indicate the improved compound ballasting resistor n0t only effectively prevents the 'Runaway' and the second breakdown caused by current concentrating, improves transistor's re1iability and life time, but also helps improve power transistor's power gain.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1999年第5期486-489,共4页
Journal of University of Electronic Science and Technology of China
基金
四川省应用基础研究专项基金
