摘要
CdMnTe是近年来出现的一种新型半导体材料,由于材料中含有磁性Mn2+离子,所以又称之为稀释磁性半导体。它具有独特的磁学、光学、电学性质,同时也可用作红外探测器制备中的衬底材料,但是,受材料本身特性的限制,采用传统的长晶工艺制备这种材料存在有较大的困难。本文采用ACRT—B技术来进行晶体生长,使混料和长晶一次完成。
Cd M n Te alloys are new kinds of sem iconductors developed in resent years. They are alsocalled diluted m agnetic sem iconductors since they contain m agnetic ions M n2+ . These alloys exhibit som especial m agnetic,optical and electrical properties. In the m ean w hile,they can be used as substrates forpreparing infrared detector film s. Unfortunately,it is rather difficult to prepare this kind of m aterial by con ventional process of crystalgrow th due to the lim itation oftheir ow n characteristics. W e grow Cd M n Te crys tals by A C R T B,a new technology,in order that both synthesis and crystal grow th can be com pleted in justone process. In this w ay,the first batch of Cd M n Te crystals is obtained successfully.
出处
《材料科学与工程》
CSCD
1999年第3期31-34,共4页
Materials Science and Engineering
基金
航空基金资助