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核壳结构PS/CeO_2复合微球的制备及其在化学机械抛光中的应用 被引量:3

Preparation of Composite Polystyrene-Core CeO_2-Shell Microspheres and Their Application in the Oxide Chemical Mechanical Polishing
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摘要 以原位化学沉淀的方法制备了不同粒径、包覆结构PS(核)/CeO2(壳)复合微球,利用X射线衍射仪、透射电子显微镜、选区电子衍射、场发射扫描电子显微镜、能谱分析仪、Fourier转换红外光谱仪、热失重分析仪和ζ电位测定仪等手段对所制备样品的微观结构进行了表征。将所制备的复合微球用做磨料,考察其对二氧化硅介质层的抛光性能,用原子力显微镜观察和测量抛光表面的微观形貌、轮廓曲线和粗糙度。结果表明,所制备的PS/CeO2复合微球具有核壳包覆结构,粒径分别约为140,180和220 nm,PS内核被粒径约为5 nm的CeO2颗粒均匀包覆。AFM结果显示,复合磨料的粒径越小,抛光后表面粗糙度越低;且酸性(pH=3)比碱性(pH=10)抛光浆料具有更好的抛光效果。 Composite polystyrene-core CeO2-shell(PS/CeO2) microspheres with different particle size had been synthesized by in-situ chemical precipitation technique.The as-synthesized PS/CeO2 composite microspheres samples were characterized by techniques of X-ray diffraction(XRD),transmission electron microscope(TEM),selected area electron diffraction patterns(SAED),field emission scanning electron microscope(FESEM),electron energy dispersive spectroscope(EDS)、fourier transform infrared spectrum(FTIR),thermogravimetric analysis(TGA) and ζ potential analyzer.Effects of particle size and slurrys pH value on the oxide chemical mechanical polishing performance of PS/CeO2 composite abrasives were characterized by atomic force microscope(AFM).The results indicated that PS/CeO2 composite abrasives with core-shell morphology are obtained successfully,and the particle size of as-prepared PS/CeO2 composite microspheres is about 140,180 and 220 nm,respectively,and the PS microsphere is uniformly coated by CeO2 nanoparticle(particle size of ~5 nm).After CMP,the surface roughness of SiO2 dielectric layer is decreased in particle size of composite abrasives,and the polishing performance using acid slurry(pH=3) is better than that of alkaline slurry(pH=10).
出处 《无机化学学报》 SCIE CAS CSCD 北大核心 2011年第1期66-72,共7页 Chinese Journal of Inorganic Chemistry
基金 江苏省工业支撑计划项目(No.BE2008037) 常州市工业科技攻关项目(No.CE2007068 CE2008083) 常州大学青年人才基金(No.JQ201005)资助
关键词 PS/CeO2复合微球 核壳结构 磨料 化学机械抛光 PS/CeO2 composite microspheres core-shell morphology abrasives chemical mechanical polishing
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