摘要
研究了退火对（１－ ｘ）ＰＭＮ－ ｘＰＴ（ｘ＝ ０ ～０ ．３４） 陶瓷介电和压电性能的影响，分析了机理． 结果表明， 在ＰＴ含量较低时， 退火使介电常数稍有提高；ＰＴ含量较高， 接近准同型相界时， 退火使介电常数有较大提高，尤其在居里温度附近， 介电常数有显著提高． 退火后， 相变扩散因子变小，压电系数ｄ３３ 由３６７ｐＣ／Ｎ 提高到５３７ｐＣ／Ｎ，介电常数Ｋｍ 由１８０００ 提高到约２７０００ ．
Effects of thermal annealing on the dielectric and piezoelectric properties of PMN PT ceramics were studied and the mechanisms were discussed. An enhancement in the dielectric and piezoelectric properties was observed in the thermally annealed specimens. The enhancement in dielectric constants is small in compositions with low PT content. But in composition near the morphotropic phase boundary with higher PT content, the increase in dielectric constant is large, especially in the vicinity of Curie temperature. After annealing at 850℃ for 4h, the diffusion factors decreased, the piezoelectric coefficient d 33 and the maximum dielectric constant Km increased from 367pC/N and 18000 to 537pC/N and 27000 respectively in (1- x )PMN- x PT ceramic system with x =0.33.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1999年第5期472-476,共5页
Chinese Journal of Materials Research
基金
西安交通大学博士学位论文基金
