反应离化簇团束制备氮化镓薄膜

GaN Thin Film Deposited By RICBD Technique

根据离化簇团束的基本性质与原理，运用反应离化簇团束技术在低衬底温度下制备了氮化镓薄膜．透射电子显微镜和扫描电子显微镜测定出该薄膜为多晶薄膜．Ｘ射线光电子能谱（ＸＰＳ）测定结果表明，已经形成了Ｇａ—Ｎ 化学键，氮、镓原子比接近１∶１，说明反应气体离化簇团技术是一条在较低温度下制备氮化镓薄膜的可行的技术途径．薄膜中含有少量氧化镓，通过多组数据的比较发现，增加氮气的离化率有助于减少薄膜中的氧含量．

According the basic theory of ionized cluster beam, GaN thin films was deposited by reactive ionized cluster beam technique at the substrate temperture of about 400 ℃. The measurements of TEM and SEM reveal that this film is a polycrystalloid. The composition of the film is measured by XPS. The result proves the existence of Ga—N bonding. The measurement comfirms that atomic ratio of Ga and N in the film is near 1∶1. There is a little amount of Ga 2O 3 in the film. It is proved by the comparison between two experiments that increasing nitrogen ions ration in the beam can decrease Ga 2O 3. On the summer, the RICBD is a hopeful way to prepare GaN at low substrate temperature and at fairly depositing rate.