运用Nd:YAG激光器的InGaAsP超晶格激光诱导无序

InGaAsP Superlattice Disordering Using Nd:YAG Laser

对与ＩｎＰ晶格匹配的ＩｎＧａＡｓＰ四元系量子阱材料进行了热稳定性能的研究，通过光荧光谱（ＰＬ）的测量发现：量子阱材料在６５０ ℃以上的常规退火条件下，有最大可达１５５ ｍ ｅＶ 的ＰＬ峰值蓝移，表明禁带宽度有明显增大．运用１．０６４ μｍ 连续输出的Ｎｄ：ＹＡＧ激光器进行光子吸收诱导无序（ＰＡＩＤ）技术的研究，比较量子阱材料被辐照前后荧光谱的峰值位置和谱宽，发现量子阱结构的禁带宽度在激光辐照后有明显增大，证明有量子阱混合现象产生．衬底预加热结果表明，提高衬底温度可减少ＰＡＩＤ中的激光辐照时间和平均功率密度．

Thermal stability of InGaAsP quaternary quantum well material lattice\|matched to InP is investigated. Blue shift of PL spectrum up to 155meV is observed, which suggests bandgap of quantum wells increases obviously. Photoabsorption induced disordering using 1.064 μm Nd:YAG cw laser is studied. Quantum Wells Intermixing is deduced from bandgap increasing by comparing PL spectrum before and after laser irradiated. Time of laser irradiation process can be reduced by heating sample in advanced.