摘要
The rare earth element Gd is doped into N Si substrate using thermal diffusion process. The rectifying contact with junction function is formed and reverse breakdown voltage is higher partly than 160v. The photocurrent can be observed in part of PN junction .
The rare earth element Gd is doped into N Si substrate using thermal diffusion process. The rectifying contact with junction function is formed and reverse breakdown voltage is higher partly than 160v. The photocurrent can be observed in part of PN junction .
出处
《武汉大学学报（自然科学版）》
CSCD
1999年第5期617-618,共2页
Journal of Wuhan University(Natural Science Edition)
关键词
稀土元素
掺杂
热扩散
整流接触
硅基
rare earth dope
thermal diffusion
rectifying contact
photocurrent
