摘要
基于DRAM的内存子系统在容量不断增大的过程中消耗了40%的能量。相变随机访问存储器PRAM(phase-change random access memory)作为潜在的替代品可以解决内存容量和能耗的问题。然而,PRAM存在写操作寿命有限和带宽较低等问题。为此提出了的Shift-Min-Write机制,通过减少写操作流量达到延长写操作寿命和增加写带宽的目的。实验结果证明:与传统方法相比,新方法可以增加写带宽和写寿命1倍以上,并减少大约60%的写操作,而且不会随字宽增大而有明显的退化。
The memory subsystem accounts for a significant（about 40%） cost and power budget of a computer system.Current dram-based main memory systems are starting to reach the power cost limit.An alternative memory technology that uses resistance contrast in phase-change material is being actively investigated in the circuits community.Phase-change random access memory（PRAM） devices offer more density capacity of future systems while remaining within the cost and power constraints.However,the relatively low write bandwidth and the less-than-desirable write endurance of PRAM remain for improvement.Shift-Min-Write is proposed and evaluated,a simple microarchitectural technique to replace a PRAM write operation.Experiments show that the proposed mechanism enlarges write bandwidth and endurance more than 1X and also reduce more than 60% of write traffic,even when word width increases.
关键词
相变随机存储器
写操作
内存性能
phase-change random access memory
write operation
memory performance
