摘要
根据负反馈原理,提出一种复合管结构来补偿异质结双极型晶体管(HBT)的自热效应。仿真和测试曲线结果表明,在较宽环境温度和较大输出电流密度范围内,复合管的自热效应得到了有效抑制,静态工作点稳定,采用此复合管设计的功率放大器的1 dB提高了2 dB,线性得到了改善。
A composite transistor design is proposed to compensate GaInP/GaAs heterojunction bipolar transistor＇s （HBT＇s） self-heating problem based on negative feedback technique. The proposed design produced some matching results in simulation and measurement. In the broad ambient temperature and output current density range, the self-heating effect of composite transistor was restrained, a more stable DC biasing point was achieved. The uses of such composite transistor can significantly improve the design of power amplifiers and its linearity is an important specification.
出处
《现代电子技术》
2011年第2期145-147,150,共4页
Modern Electronics Technique
