HfO_2/SiO_2双色膜在1064nm和532nm激光辐照下的损伤特性

Laser-induced damage of 1064nm antireflection/532nm high-reflection bichromatic coatings

采用电子束蒸发的方式,制备了有氧化硅内保护层和没有氧化硅内保护层的1 064 nm高透过、532 nm高反射的HfO2/SiO2双色膜,测量了它们的光学性能以及在基频和倍频激光辐照下的抗损伤性能。结果表明:氧化硅内保护层提高了双色膜在基频光辐照下的损伤阈值,对双色膜在倍频光辐照下的损伤阈值无明显影响。通过观察薄膜的损伤形貌,分析破斑的深度信息结合驻波场分布,对两类双色膜在基频光和倍频光下的损伤机制做了初步探讨。分析表明:氧化硅内保护层提高了膜基界面的抗损伤性能,从而提高了双色膜在基频光下的损伤阈值。

1 064 nm antireflection/532 nm high-reflection bichromatic coatings with and without barrier layer were fabricated on the UBK7 substrate using electron beam evaporation technique.The optical property and laser-induced damage threshold（LIDT） of the coatings were investigated,respectively.Compared with the coatings without barrier layer,the 1 064 nm LIDT of the bichromatic coatings with SiO2 barrier layer is 49.6% higher.By analyzing the morphology and depth information of laser-induced damage spots,and the standing wave electric field distribution of the film stacks,the mechanisms of 1 064 nm and 532 nm laser-induced damages of the bichromatic coatings were discussed.The results show that SiO2 barrier layer strengthens the coatings-substrate interface,and therefore the 1 064 nm LIDT of the bichromatic coatings with barrier layer is improved.